Acoustoelectric effect in semiconductor superlattice

Authors

  • Ujjwal Alok Univ. Dept. of Physics, T.M.B. University, Bhagalpur (Bihar)
  • Manoj Kumar Univ. Dept. of Physics, T.M.B. University, Bhagalpur (Bihar)
  • BK Singh Univ. Dept. of Physics, T.M.B. University, Bhagalpur (Bihar)
  • Praveen Kumar Research Scholar, S.K.M. University, Dumka (Jharkhand)

DOI:

https://doi.org/10.3126/bibechana.v8i0.5013

Keywords:

acoustoelectric current, acoustomagnetothermal effect, quantum transparency

Abstract

Acoustoelectric effect in semiconductor superlattice (SL) in the region ql >>1 has been studied. The equation of motion of the lattice has been transformed into a simple form which becomes identical with the dynamic equation for the wave amplitude in the theory of plasma turbulence. A dispersion relation has been derived from the acoustoelectric current J on the constant electric field E. It is noted that when the electric field is negative the current J rises, reaches a peak and falls off. On the other hand, when the electric field is positive the current decreases, reaches a peak and then rises. A similar observation has been noted for an acoustoelectric interaction in a multilayered structure resulting from the analysis of the Si/SiO2 structure.

Keywords: acoustoelectric current; acoustomagnetothermal effect; quantum transparency

DOI: http://dx.doi.org/10.3126/bibechana.v8i0.5013   

BIBECHANA 8 (2012) 67-72

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Published

2012-01-15

How to Cite

Alok, U., Kumar, M., Singh, B., & Kumar, P. (2012). Acoustoelectric effect in semiconductor superlattice. BIBECHANA, 8, 67–72. https://doi.org/10.3126/bibechana.v8i0.5013

Issue

Vol. 8 (2012)

Section

Research Articles

License

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