Electrical Properties of Rare Earth Chalcogenides Under the Effect of Pressure

Authors

  • D.R. Adhikari Department of Natural Sciences (Physics), School of Science Kathmandu University, Kavre, Nepal
  • S.K. Adhikari Department of Physics, Govt. P. G. College, Rishikesh (Dehradun), India
  • V.K. Singh Department of Physics, D.S. College (Aligarh), India

DOI:

https://doi.org/10.3126/kuset.v3i1.66854

Keywords:

Conductivity, Resistivity, Trivalent, Carrier effecitve mass and mobility

Abstract

The numerical analysis of electrical properties involved in transport mechanism such as carrier concentration, carrier mobility, carrier effective mass, electrical resistivity and electrical conductivity for some rare earth chalcogenides is discussed. The formulae are derived and used to obtain numerical values of these electrical parameters, which are useful to describe the electrical behavior (insulating, semiconducting and metallic) of rare earth chalcogenides.

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Published

2007-01-30

How to Cite

Adhikari, D., Adhikari, S., & Singh, V. (2007). Electrical Properties of Rare Earth Chalcogenides Under the Effect of Pressure. Kathmandu University Journal of Science, Engineering and Technology, 3(1). https://doi.org/10.3126/kuset.v3i1.66854

Issue

Vol. 3 No. 1 (2007)

Section

Original Research Articles

License

Copyright (c) 2007 Kathmandu University Journal of Science, Engineering and Technology

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